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Small fan

Small fan


The MOSFET solution for small fans can be implemented from three core dimensions: selection, drive topology, and reliability optimization, taking into account energy efficiency, noise reduction, and cost control, and adapting to small fan products of different power levels.

Selection of core components
Mainstream universal solution:Selecting N-channel MOSFETs such as BRD50N03, with a rated withstand voltage of 30V and a continuous conduction current of 50A, a typical conduction resistance of only 7.0m Ω, and nanosecond switching characteristics suitable for 100 levels of stepless speed regulation scenarios, low conduction loss can directly improve the battery life performance of portable fans.
High integration single-chip solution:Using FT710230A, the Hall sensor, power MOSFET, and control logic are all integrated into the TSOT-23-6A package, requiring only a few peripheral components to complete closed-loop driving, significantly reducing PCB footprint and BOM costs. It is suitable for products such as 12V small cooling fans and desktop small fans.
High cost-effective solution:Using a dedicated MOSFET driven by a brushless DC motor, it has strong avalanche resistance, low internal resistance, and a single cost as low as 0.1 yuan, making it suitable for cost sensitive bulk consumer grade small fan products.

Typical driver topology design
Low edge drive topology:This is the most commonly used solution for small fans. N-MOSFET is connected between the motor load and ground, and can be directly controlled by the PWM pin of the MCU. It has the advantages of fast switching speed, simple driving logic, and low cost, and is suitable for most 5V/12V small fan speed regulation scenarios.
Gate assisted design:Gate series connection of 10-22 Ω resistors, precise control of MOSFET switching speed, balancing switching losses and electromagnetic noise; Add an additional 10k Ω gate to lower the resistance and avoid misguiding the MOSFET when the MCU is powered on.
High current fan adaptation:For high-power products such as violent fans, an H-bridge full bridge drive topology is adopted, combined with dual N-MOS tube combinations, which can support stable operation of high-speed brushless motors above 85000r/min.

Reliability and noise reduction optimization
Anti direct burning design:In the half bridge/full bridge topology, the Vgs in the off state can be pulled to -3V~-5V through a negative pressure turn off circuit, or an active Miller clamp circuit can be added to avoid direct breakdown of the upper and lower tubes. It has been tested that the anti dV/dt interference ability can be improved by more than 3 times.
EMI and noise suppression:The power switch circuit adopts a compact layout, with MLCC decoupling capacitors placed near the power input end to shorten the motor lead length as much as possible and reduce high-frequency radiation; By adjusting the gate resistance to optimize di/dt, we can avoid the ringing of MOSFETs during high-speed switching from being converted into harsh electromagnetic noise.
Improved protection mechanism:The main circuit is connected in series with fuses or electronic fuses to achieve overcurrent protection, and the motor drive end is equipped with locked rotor detection and overcurrent shutdown logic; Connect an RC absorption circuit or TVS transistor in parallel between the drain and source of the MOS transistor for inductive loads to suppress the off peak voltage.

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