The AI computing power box MOSFET solution is designed for high-density edge computing scenarios, focusing on three core requirements: 48V high-voltage bus, high current GPU/ASIC power supply, and 7x24 hour uninterrupted operation. It covers efficient device selection and system optimization for the entire power supply chain, achieving a balance between ultimate energy efficiency and power density.

Scenario based Device Scheme for Core Power Supply Link
1. Front end high-voltage AC/DC and totem pole PFC link
As the first level of conversion for power grid input, the core requirements are low switching losses, high voltage tolerance, and adaptability to titanium grade high efficiency requirements:
SiC flagship solution: AOS AOM020V120X3, third-generation 1200V SiC MOSFET, Rds (on) only 20m Ω, with a bridge free totem pole PFC topology, the overall efficiency of the machine exceeds 99%, suitable for high-power computing power box power modules above 5.5kW
Domestic high reliability solution: Galaxy Microelectronics 1200V SiC series, TO-247-4L Kelvin package, supports 2MHz high-frequency switching, reduces losses by 60% compared to traditional silicon-based IGBT switches, significantly reduces heat dissipation and magnetic component volume
Toshiba industrial grade solution: TW007D120E, 1200V trending gate SiC, improves Buck conversion efficiency from 94% to 96.5%, with an annual power saving of over 1MWh per single computing power box

2. 48V Intermediate Bus Conversion (IBC) link
The core requirements for a 48V to 12V/5V isolated DC-DC converter are high power density and double-sided heat dissipation capability
AOS high-density solution: AONC40202, DFN3.3x3.3 source package, double-sided heat dissipation design, suitable for AI server high-power density IBC scenarios, thermal resistance reduced by 40% compared to traditional packaging
High current synchronous rectification scheme: VBGQA2403, -40V/-150A P-MOS, Rds (on) as low as 2.8m Ω under SGT process, DFN8 (5x6) package with extremely low parasitic inductance, perfectly suitable for 48V bus high current output scenarios

3. Power supply link of computing power core load point (PoL)
Directly supplying power to GPU/AI ASIC cores, dynamic load changes are severe, requiring extremely low on resistance and ultra fast response:
High current tube scheme: VBQF1102N, 100V/35.5A N-MOS, Trench process Rds (on) only 17m Ω, DFN8 (3x3) package, suitable for high-frequency synchronous Buck with core voltage rails such as 48V to 1.8V
Edge computing power optimization solution: VBGQF1810, 80V/51A N-MOS, DFN8 (3x3) package, balancing low Qg and low Coss, maintaining a conversion efficiency of over 95% at a switching frequency of 200kHz

4. Intelligent load management and hot plug protection
The core requirements for power control of hard disk arrays, PCIe interfaces, and cooling fans are high integration and fast fault isolation:
Multi bay power supply solution: VBQF1310, 30V/30A N-MOS, DFN8 (3x3) package, with a voltage tolerance margin of 150% in 12V bus scenarios, supporting hard disk hot swapping surge impact
Dual channel integration solution: VBQG4240, dual P channels integrated in DFN6 (2x2) ultra small package, single channel Rds (on) only 40m Ω, realizing independent distribution of DDR and SSD multiple loads, greatly saving PCB space
High voltage input protection scheme: VBK2101K, -100V/-0.52A P-MOS, SC70-3 ultra small package, used for 48V input terminal anti reverse connection and surge suppression, as a "safety valve" for system power supply